XBS013R1DR_12 Datasheet, PDF (2/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 100mA, 30V Type

XBS013R1DR-G
˙TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltageç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç (2) Reverse Current vs. Reverse Voltage
100
100
Ta=125℃
75℃
10
Ta=125℃
10
100℃
25℃
1
1
75℃
0.1
25℃
-25℃
0.1
0.0
0.2
0.4
0.6
0.8
0.01
0
10
20
30
Forward Voltage　V_F (V)
ççççç ççç
Reverse Voltage　V_R (V)
(3) Forward Voltage vs. Operating Temperatureç ç ç ç ç ç ç ç ç ç ç ç ç ç (4) Reverse Current vs. Operating Temperature
0.6
100
VR=20V
10
10V
0.4
IF=10mA
1
0.2
1mA
0.1
0.0
-50
0
50
100
150
0.01
0
50
100
150
Operating Temperature　Ta (℃)
çççç çççç
Operating Temperature　Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltageç ç ç ç ç ç ç ç ç ç ç ç ç (6) Average Forward Current vs. Operating Temperature
25
0.2
20
15
0.1
10
5
Ta=25℃
0
0
10
20
30
0.0
0
50
100
150
Reverse Voltage　V_R (V)
çççç çççç
Operating Temperature　Ta (℃)
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