XP202A0003PR-12 Datasheet, PDF (1/5 Pages) Torex Semiconductor – P-channel 4V (G-S) MOSFET

XP202A0003PR-G
P-channel 4V (G-S) MOSFET
ETR1129-003
˙FEATURESç ç ç ç ç ç ç ç ç
・Low On Resistance
・Ultra High Speed Switching
・4V Driving
・EU RoHS Compliant, Pb Free
˙ABSOLUTE MAXIMUM RATINGS
PARMETER
SYMBOL RATINGS
Drain-Source Voltage
V_DSS
-30
Gate-Source Voltage
V_GSS
±20
Drain Current (DC)
I_D
-5
Drain Current(Pulse)⁽* ¹⁾
I_DP
-20
Channel Power Dissipation ⁽*²⁾
Pd
1.5
Channel Temperature
Tch
+150
Storage Temperature
Tstg - 55 ~ +150
(_*1)_{PWʽ10Жs,duty cycleʽ1%}
(_*2)_{Ceramic Board (250mm}2_{Ê·0.8mm) Mounting}
UNITS
V
V
A
A
W
ˆ
ˆ
˙APPLICATION
˙˔ç༻Sw్itcçhingç ç ç ç ç ç ç ç
˙PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
XP202A0003PR-G
SOT-89
1,000/Reel
* _{The “-G” suffix indicates that the products are Halogen and}
Antimony free as well as being fully RoHS compliant.
* _{The high-melting solder paste (lead-containing) is used as attachment.}
˙PIN CONFIGURATION
1.Gate
2.Drain
3.Source
SOT-89(TOP VIEWÊ£
˙çELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Drain-Source Cut-Off Current
Gate-Source Leakage Current
Gate-Source Cut-Off Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacity
Output Capacity
Feedback capacity
Turn on Delay time
Rise Time
Turn off Delay Time
Fall Time
All Gate Charge Amount
Gate Source Charge Amount
Gate Drain Charge Amount
Diode Forward Voltage
V_(BR)DSS
I_DSS
I_GSS
V_GS(off)
|yfs|
R_DS(ON)1
R_DS(ON)2
R_DS(ON)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V_SD
I_D=-1mA, V_GS=0V
V_DS=-30V, V_GS=0V
V_GS=ʶ16V,V_DS=0V
V_DS=-10V,I_D=-1mA
V_DS=-10V,I_D=-3A
I_D=-3A,V_GS=-10V
I_D=-1.5A,V_GS=-4.5V
I_D=-1.5A,V_GS=-4V
V_DS=-10V,f=1MHz
V_DS=-10V,f=1MHz
V_DS=-10V,f=1MHz
I_S=-5A, V_GS=0V
MIN.
-30
-
-
-1.2
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMITS
TYP.
-
-
-
-
8.0
47
70
80
450
110
80
7
8
31
6
10
1.5
2.5
-0.9
MAX.
-
-1
±10
-2.6
-
59
100
113
-
-
-
-
-
-
-
-
-
-
-1.2
UNITS
V
ЖA
ЖA
V
S
mЊ
mЊ
mЊ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
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