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XP162A12A6PR_12 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET
XP162A12A6PR-G
Power MOSFET
ETR1126_003
■GENERAL DESCRIPTION
The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION/
MARKING
G : Gate
S : Source
D : Drain
■FEATURES
Low On-State Resistance : Rds(on) = 0.17Ω@ Vgs = -4.5V
: Rds(on) = 0.3Ω@ Vgs = -2.5V
Ultra High-Speed Switching
Dribing Voltage
: -2.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PRODUCT NAME
PRODUCTS
XP162A12A6PR
XP162A12A6PR-G(*)
PACKAGE
SOT-89
SOT-89
ORDER UNIT
1,000/Reel
1,000/Reel
(*) The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT CIRCUIT
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss -20
V
Gate-Source Voltage
Vgss ±12
V
Drain Current (DC)
Id
-2.5
A
Drain Current (Pulse)
Idp
-10
A
Reverse Drain Current
Idr
-2.5
A
Channel Power Dissipation * Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg -55~150 ℃
* When implemented on a ceramic PCB
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