XP162A12A6PR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

91""13
1PXFS
.04
'&5
˗P-Channel Power MOS FET
˗DMOS Structure
˗Low On-State Resistance : 0.17 Ω (max)
˗Ultra High-Speed Switching
˗Gate Protect Diode Built-in
˗SOT - 89 Package
˙Applications
˔Notebook PCs
˔Cellular and portable phones
˔On - board power supplies
˔Li - ion battery systems
˙General Description
The XP162A12A6PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
˙Features
Low on-state resistance : Rds (on) = 0.17Ω ( Vgs = -4.5V )
Rds (on) = 0.3Ω ( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage : -2.5V
Gate protect diode built-in
High density mounting : SOT - 89
u
˙Pin Configuration
1
2
3
G
D
S
SOT - 89 Top View
˙Equivalent Circuit
1
2
3
P - Channel MOS FET
( 1 device built-in )
˙Pin Assignment
PIN NUMBER
1
2
3
PIN NAME
G
D
S
FUNCTION
Gate
Drain
Source
˙Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
( note ) : When implemented on a ceramic PCB
RATINGS
-20
+ 12
-2.5
-10
-2.5
2
150
-55 to 150
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C