XP162A11C0PR_1 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET

XP162A11C0PR
Power MOSFET
ETR1125_001
■GENERAL DESCRIPTION
The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V
: Rds(on) = 0.28Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage
: -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
■PIN ASSIGNMENT
PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
-30
V
Gate-Source Voltage
Vgss ±20
V
Drain Current (DC)
Id
-2.5
A
Drain Current (Pulse)
Idp
-10
A
Reverse Drain Current
Idr
-2.5
A
Channel Power Dissipation * Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature Range Tstg -55~150 ℃
* When implemented on a ceramic PCB
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