XP161A1355PR_12 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET

XP161A1355PR-G
Power MOSFET
ETR1124_003
■GENERAL DESCRIPTION
The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V
: Rds (on)= 0.07Ω@ Vgs = 2.5V
: Rds (on)= 0.15Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
G : Gate
S : Source
D : Drain
■PRODUCT NAME
PRODUCT NAME
XP161A1355PR
XP161A1355PR-G^(*)
PACKAGE
SOT-89
SOT-89
ORDER UNIT
1,000/Reel
1,000/Reel
(*) _{The “-G” suffix denotes Halogen and Antimony free as well as}
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT CIRCUIT
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss ±8
V
Drain Current (DC)
Id
4
A
Drain Current (Pulse)
Idp
16
A
Reverse Drain Current
Idr
4
A
Channel Power Dissipation *
Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg -55~150 ℃
* When implemented on a ceramic PCB
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