XP161A13555PR Datasheet, PDF (1/4 Pages) Torex Semiconductor – N-Channel Power MOSFET

◆N-Channel Power MOSFET
◆DMOS Structure
◆Low On-State Resistance : 0.05Ω(MAX.)
◆Ultra High-Speed Switching
◆SOT-89 Package
◆Gate Protect Diode Built-in
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■GENERAL DESCRIPTION
The XP161A1355PR is an N-channel Power MOSFET with low
on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be
efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■FEATURES
Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V
: Rds (on)= 0.07Ω@ Vgs = 2.5V
: Rds (on)= 0.15Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 1.5V
High Density Mounting : SOT-89
■PIN CONFIGURATION
■PIN ASSIGNMENT
PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
■EQUIVALENT CIRCUIT
1526
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss ±8
V
Drain Current (DC)
Id
4
A
Drain Current (Pulse)
Idp
16
A
Reverse Drain Current
Idr
4
A
Channel Power Dissipation *
Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature Range ^{Tstg -55~150 ℃}
* When implemented on a ceramic PCB
XP161A1355PR ETR1124_001.doc