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XP161A11A1PR_1 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET | |||
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XP161A11A1PR
Power MOSFET
ETR1122_001
â GENERAL DESCRIPTION
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
â APPLICATIONS
âNotebook PCs
âCellular and portable phones
âOn-board power supplies
âLi-ion battery systems
â FEATURES
Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
â PIN CONFIGURATION
â EQUIVALENT CIRCUIT
â PIN ASSIGNMENT
PIN NUMBER
1
2
3
PIN NAME
G
D
S
FUNCTION
Gate
Drain
Source
â ABSOLUTE MAXIMUM RATINGS
PARAMETER
Ta = 25â
SYMBOL RATINGS UNITS
Drain - Source Voltage
Vdss
30
V
Gate - Source Voltage
Vgss
±20 V
Drain Current (DC)
Id
4
A
Drain Current (Pulse)
Idp
16
A
Reverse Drain Current
Idr
4
A
Channel Power Dissipation * Pd
Channel Temperature
Tch
2
W
150 â
Storage Temperature Range Tstg -55~150 â
* When implemented on a ceramic PCB
1/5
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