XP161A11A1PR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

91""13
1PXFS
.04
'&5
x N-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.105Ω MAX
x Gate Protect Diode Built-in
x Ultra High-Speed Switching
x SOT-89 Package
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V)
Rds(on)=0.105Ω(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage: 4.5V
High density mounting: SOT-89
u
s Pin Configuration
1
2
3
G
D
S
SOT-89
(TOP VIEW)
s Equivalent Circuit

1
2
3
N-Channel MOS FET
(1 device built-in)
s Pin Assignment
PIN
NUMBER
PIN
NAME
1
G
2
D
3
S
FUNCTION
Gate
Drain
Source
s Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
30
V
±20
V
4
A
16
A
4
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a ceramic PCB
150
:
-55~150 :