XP161A11A1PR-12 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET

XP161A11A1PR-G
Power MOSFET
ETR1122_003
■GENERAL DESCRIPTION
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
G : Gate
S : Source
D : Drain
* x represents production lot number.
■EQUIVALENT CIRCUIT
■PRODUCT NAME
PRODUCTS
XP161A11A1PR
XP161A11A1PR-G^(*)
PACKAGE
SOT-89
SOT-89
ORDER UNIT
1,000/Reel
1,000/Reel
(*) _{The “-G” suffix denotes Halogen and Antimony free as well as}
being fully RoHS compliant.
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Ta = 25℃
SYMBOL RATINGS UNITS
Drain - Source Voltage
Vdss
30
V
Gate - Source Voltage
Vgss ±20 V
Drain Current (DC)
Id
4
A
Drain Current (Pulse)
Idp
16
A
Reverse Drain Current
Idr
4
A
Channel Power Dissipation * Pd
Channel Temperature
Tch
2
W
150
℃
Storage Temperature
Tstg -55~150 ℃
* When implemented on a ceramic PCB
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