XP152A12C0MR-12 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET

XP152A12C0MR-G
Power MOSFET
ETR1121_003
■GENERAL DESCRIPTION
The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V
: Rds(on) = 0.5Ω@ Vgs = -2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -2.5V
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
21 2 x
G：Gate
S：Source
D：Drain
■PIN ASSIGNMENT
PRODUCTS
PACKAGE
ORDER UNIT
XP152A12C0MR
SOT-23
3,000/Reel
XP152A12C0MR-G^(*)
SOT-23
3,000/Reel
(*) _{The “-G” suffix denotes Halogen and Antimony free as well as}
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT CIRCUIT
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Ta = 25℃
SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss
-20
V
Gate - Source Voltage
Vgss
±12
V
Drain Current (DC)
Id
-0.7
A
Drain Current (Pulse)
Idp
-2.8
A
Reverse Drain Current
Idr
-0.7
A
Channel Power Dissipation * Pd
0.5
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg -55~150 ℃
* When implemented on a ceramic PCB
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