XP151A13A0MR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

91"".3
1PXFS
.04
'&5
˗N-Channel Power MOS FET
˗DMOS Structure
˗Low On-State Resistance : 0.1Ω (max)
˗Ultra High-Speed Switching
˗Gate Protect Diode Built-in
˗SOT - 23 Package
˙Applications
˔Notebook PCs
˔Cellular and portable phones
˔On - board power supplies
˔Li - ion battery systems
˙General Description
The XP151A13A0MR is a N-Channel Power MOS FET with low on
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
˙Features
Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V )
Rds (on) = 0.14Ω ( Vgs = 2.5V )
Rds (on) = 0.25Ω ( Vgs = 1.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 1.5V
High density mounting : SOT - 23
˙Pin Configuration
u
D
3
1
2
G
S
SOT - 23 Top View
˙Equivalent Circuit
3
1
2
N - Channel MOS FET
( 1 device built-in )
˙Pin Assignment
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
˙Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
+8
1
4
1
0.5
150
-55 to 150
( note ) : When implemented on a ceramic PCB
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C