XP151A11B0MR_1 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET

XP151A11B0MR
Power MOSFET
ETR1117_001
■GENERAL DESCRIPTION
The XP151A11B0MR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Packabe
: SOT-23
■PIN CONFIGURATION
■PIN ASSIGNMENT
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
■EQUIVALENT CIRCUIT
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss
30
V
Gate - Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
1
A
Drain Current (Pulse)
Idp
4
A
Reverse Drain Current
Idr
1
A
Channel Power Dissipation * Pd
0.5
W
Channel Temperature
Tch
150
℃
Storage Temperature Range Tstg -55~150 ℃
* When implemented on a ceramic PCB
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