XP134A1275SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – P-Channel Power MOS FET

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NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.075Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
N2 FET Devices Built-in
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The XP134A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V )
: Rds (on) = 0.115Ω ( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOP-8
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PIN
NUMBER
PIN
NAME
FUNCTION
1
S1
Source
2
G1
Gate
3
S2
Source
4
G2
Gate
5~6
D2
Drain
7~8
D1
Drain
11
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Ta=25^OC
PARAMETER
SYMBOL RATINGS
UNITS
Drain - Source Voltage
Vdss
- 20
V
Gate - Source Voltage
Vgss
+1 2
V
Drain Current (DC)
Id
- 4.5
A
Drain Current (Pulse)
I dp
- 18
A
Reverse Drain Current
I dr
- 4.5
A
Continuous Channel
Pd
2
W
Power Dissipation (note)
Channel Temperature
Tch
150
O_C
Storage Temperature
Tstg
- 55 ~ 150
O_C
( note ) : When implemented on a glass epoxy PCB
783