|
XP133A1330SR_1 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET | |||
|
XP133A1330SR
Power MOSFET
ETR1113_001
â GENERAL DESCRIPTION
The XP133A1330SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics. Two FET devices are built into the one package
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
â APPLICATIONS
âNotebook PCs
âCellular and portable phones
âOn-board power supplies
âLi-ion battery systems
â FEATURES
Low On-State Resistance : Rds(on)= 0.03Ω(Vgs = 4.5V)
: Rds(on)= 0.04Ω(Vgs = 2.5V)
: Rds(on)= 0.07Ω(Vgs = 1.5V)
Ultra High-Speed Switching
Driving Voltage
: 1.5V
N-Channel Power MOSFET
DMOS Structure
Two FET Devices Built-in
Package
: SOP-8
â PIN CONFIGURATION
â PIN ASSIGNMENT
PIN NUMBER
1
2
3
4
5~6
7~8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
â EQUIVALENT CIRCUIT
â ABSOLUTE MAXIMUM RATINGS
Ta = 25â
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss
±8
V
Drain Current (DC)
Id
6
A
Drain Current (Pulse)
Idp
20
A
Reverse Drain Current
Idr
6
A
Channel Power Dissipation * Pd
2
W
Channel Temperature
Tch
150
â
Storage Temperature Range Tstg -55~150 â
* When implemented on a glass epoxy PCB
1/5
|
▷ |