XP133A1145SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

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NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.045Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
NTwo FET Devices Built-in
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The XP133A1145SR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V)
: Rds(on)=0.045Ω (Vgs=4.5V)
Ultra high-speed switching
Operational Voltage : 4.5V
High density mounting : SOP-8
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PIN
NUMBER
PIN
NAME
FUNCTION
1
S1
Source
2
G1
Gate
3
S2
Source
4
G2
Gate
5~6
D2
Drain
7~8
D1
Drain
11
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Ta=25°C
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
30
V
±20
V
6
A
20
A
6
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55~150 °C
Note: When implemented on a glass epoxy PCB
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