XP132A0265SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – P-Channel Power MOS FET

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NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.065Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
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The XP132A0265SR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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Low on-state resistance : Rds(on)=0.065Ω(Vgs=-5V)
: Rds(on)=0.12Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOP-8
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PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
-20
V
Gate-Source Voltage
Vgss
±12
V
Drain Current (DC)
Id
-6
A
Drain Current (Pulse)
Idp
-20
A
Reverse Drain Current
Idr
-6
A
Continuous Channel
Power Dissipation (note)
Pd
2.5
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150
:
Note: When implemented on a glass epoxy PCB
751