English
Language : 

XP131A1330SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – XP131A1330SR
1PXFS.04'&5
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.03Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
˙(FOFSBM%FTDSJQUJPO
The XP131A1330SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙"QQMJDBUJPOT
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
˙'FBUVSFT
Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V )
: Rds (on) = 0.04Ω ( Vgs = 2.5V )
: Rds (on) = 0.07Ω ( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage : 1.5V
High density mounting : SOP-8
˙1JO$POGJHVSBUJPO
4 ̍
4 ̎
4 ̏
( ̐
̔%
̓%
̒%
̑%
401
Ê¢5017*&8Ê£
˙&RVJWBMFOU$JSDVJU
̍
̎
̏
̐
̔
̓
̒
̑
/$IBOOFM.04'&5
EFWJDFCVJMUJO
˙1JO"TTJHONFOU
1*//6.#&3
 ʙ

 ʙ
1*//".&
̨
̜
̙
'6/$5*0/
4PVSDF
(BUF
%SBJO
˙"CTPMVUF.BYJNVN3BUJOHT
11
5Bˆ
1"3".&5&3
4:.#0- 3"5*/(4 6/*54
%SBJO4PVSDF7PMUBHF 7ETT

(BUF4PVSDF7PMUBHF 7HTT
ʶ
%SBJO$VSSFOU %$
*E

%SBJO$VSSFOU 1VMTF
*EQ

3FWFSTF%SBJO$VSSFOU
*ES

$POUJOVPVT$IBOOFM
1PXFS%JTTJQBUJPO OPUF
1E

$IBOOFM5FNQFSBUVSF 5DI

4UPSBHF5FNQFSBUVSF 5TUH
ʙ
OPUF 8IFOJNQMFNFOUFEPOBHMBTTFQPYZ1$#
Ì«
Ì«
̖
̖
̖
̬
ˆ
ˆ
699