XP131A1235SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOSFET

91"43
1PXFS
.04'&5
˗N-Channel Power MOS FET
˗DMOS Structure
˗Low On-State Resistance : 0.035Ω (max)
˗Ultra High-Speed Switching
˗SOP - 8 Package
˙Applications
˔Notebook PCs
˔Cellular and portable phones
˔On - board power supplies
˔Li - ion battery systems
˙General Description
The XP131A1235SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙Features
Low on-state resistance : Rds (on) = 0.035Ω ( Vgs = 4.5V )
Rds (on) = 0.048Ω ( Vgs = 2.5V )
Ultra high-speed switching
Operational Voltage : 2.5V
High density mounting : SOP - 8
˙Pin Configuration
S1
S2
S3
G4
SOP - 8 Top View
8D
7D
6D
5D
˙Equivalent Circuit
1
8
2
7
3
6
4
5
N - Channel MOS FET
( 1 device built-in )
˙Pin Assignment
PIN NUMBER PIN NAME
FUNCTION
u
1-3
S
4
G
Source
Gate
5-8
D
Drain
˙Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
+ 12
7
30
7
2.5
150
-55 to 150
( note ) : When implemented on a glass epoxy PCB
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C