XP131A0616SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOSFET

91"43
1PXFS
.04'&5
˗
N-Channel Power MOS FET
˗
DMOS Structure
˗
Low On-State Resistance: 0.016Ω MAX
˗
Ultra High-Speed Switching
˗
SOP-8 Package
˙ Applications
˔
Notebook PCs
˔
Cellular and portable phones
˔
On-board power supplies
˔
Li-ion battery systems
˙ General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙ Features
Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V)
Rds(on)=0.022Ω(Vgs=2.5V)
Rds(on)=0.045Ω(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage: 1.5V
High density mounting: SOP-8
˙ Pin Configuration
S1
S2
S3
G4
SOP-8
(TOP VIEW)
8D
7D
6D
5D
˙ Equivalent Circuit
1
8
2
7
3
6
4
5
N-Channel MOS FET
(1 device built-in)
u
˙ Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1~3
S
Source
4
G
Gate
5~8
D
Drain
˙ Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
20
V
±8
V
10
A
30
A
10
A
Continuous Channel
Power Dissipation (note)
Pd
2.5
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150 :
Note: When implemented on a glass epoxy PCB