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XBS306S17_15 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode | |||
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XBS306S17R-G
Schottky Barrier Diode, 3A, 60V Type
ETR1616-002a
â FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.59V (TYP.)
: IF(AVE)=3A
: VRM=60V
â ABSOLUTE MAXIMUM RATINGS
Ta=25â
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
60
V
Reverse Voltage (DC)
VR
60
V
Forward Current (Average)
IF(AVE)
3
A
Non Continuous
Forward Surge Current*1
IFSM
50
A
Junction Temperature
Tj
125
â
Storage Temperature Range
Tstg
-55ï½+150 â
*1ï¼ Non continuous high amplitude 60Hz half-sine wave.
â APPLICATIONS
âRectification
âProtection against reverse connection of battery
â PACKAGING INFORMATION
â MARKING RULE
Cathode Bar
â â¡â¢â£â¤â¥: 306S17(Product Number)
â¦â§
: Assembly Lot Number
SMA
Unit: mm
â PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS306S17 R-G
SMA (Halogen & Antimony free)
XBS306S17 R
SMA
* The â-Gâ suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
â ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2ï¼trr measurement circuit
VF1
IF=200μA
VF2
IF=3A
IR1
VR=30V
IR2
VR=60V
Ct
VR=1V , f=1MHz
trr
IF=IR=10mA , irr=1mA
Bias
Device Under test
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.145
0.59
3
9
195
55
Ta=25â
MAX.
-
0.66
-
300
-
-
UNIT
V
V
μA
μA
pF
ns
Pulse Generatrix
Oscilloscope
1/3
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