XBS306S17-12 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 3A, 60V Type

XBS306S17R-G
Schottky Barrier Diode, 3A, 60V Type
ETR1616-002a
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: V_F=0.59V (TYP.)
: I_F(AVE)=3A
: V_RM=60V
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
60
V
Reverse Voltage (DC)
VR
60
V
Forward Current (Average)
IF(AVE)
3
A
Non Continuous
Forward Surge Current^*1
IFSM
50
A
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55～+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
■MARKING RULE
Cathode Bar
①②③④⑤⑥: 306S17(Product Number)
⑦⑧
: Assembly Lot Number
SMA
Unit: mm
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS306S17 R-G
SMA (Halogen & Antimony free)
XBS306S17 R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time^*2
*2：trr measurement circuit
VF1
I_F=200μA
VF2
I_F=3A
IR1
V_R=30V
IR2
V_R=60V
Ct
V_R=1V , f=1MHz
trr
I_F=I_R=10mA , irr=1mA
Bias
Device Under test
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.145
0.59
3
9
195
55
Ta=25℃
MAX.
-
0.66
-
300
-
-
UNIT
V
V
μA
μA
pF
ns
Pulse Generatrix
Oscilloscope
1/3