XBS303V17_12 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 3A, 30V Type

XBS303V17R-G
Schottky Barrier Diode, 3A, 30V Type
ETR1614-001a
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: V_F=0.355V (TYP.)
: I_F(AVE)=3A
: V_RM=30V
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
30
V
Reverse Voltage (DC)
VR
30
V
Forward Current (Average)
IF(AVE)
3
A
Non Continuous
Forward Surge Current^*1
IFSM
60
A
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55～+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
■MARKING RULE
①②③④⑤⑥: 303V17(Product Number)
⑦⑧
: Assembly Lot Number
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
Cathode Bar
SMA
Unit: mm
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS303V17R-G
SMA (Halogen & Antimony free)
XBS303V17R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time^*2
*2：trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1
I_F=0.5A
VF2
I_F=1A
VF3
I_F=3A
IR
V_R=30V
Ct
V_R=1V , f=1MHz
trr
I_F=I_R=10mA , irr=1mA
Bias
Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.265
0.295
0.355
0.35
385
90
Ta=25℃
MAX.
0.34
0.36
0.39
3
-
-
UNIT
V
V
V
mA
pF
ns
1/3