XBS203V17_12 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 2A, 30V Type

XBS203V17R-G
Schottky Barrier Diode, 2A, 30V Type
ETR1611-001a
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: V_F=0.35V (TYP.)
: I_F(AVE)=2A
: V_RM=30V
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
30
V
Reverse Voltage (DC)
VR
30
V
Forward Current (Average)
IF(AVE)
2
A
Non Continuous
Forward Surge Current^*1
IFSM
50
A
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55～+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
■MARKING RULE
①②③④⑤⑥: 203V17 (Product Number)
⑦⑧
: Assembly Lot Number
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
Cathode Bar
SMA
Unit: mm
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS203V17R-G
SMA (Halogen & Antimony free)
XBS203V17R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time^*2
*2：trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1
VF2
VF3
IR
Ct
trr
Bias
I_F=0.5A
I_F=1A
I_F=2A
V_R=30V
V_R=1V , f=1MHz
I_F=I_R=10mA , irr=1mA ,
Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.28
0.305
0.35
0.35
280
70
Ta=25℃
MAX.
0.365
0.375
0.39
3
-
-
UNIT
V
V
V
mA
pF
ns
1/3