XBS203V17 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 2A, 30V Type

XBS203V17
Schottky Barrier Diode, 2A, 30V Type
JTR1611-001
˙FEATURES
Forward Voltageç ç ç ç ç ç
: V_F=0.35V (TYP.)
Forward Currentç ç ç ç ç ç
: I_F(AV)=2A
Repetitive Peak Reverse Voltageç : V_RM=30V
˙ABSOLUTE MAXIMUM RATINGS
Ta=25ˆ
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
30
V
Reverse Voltage (DC)
VR
30
V
Forward Current (Average)
IF(AV)
2
A
Non Continuous
Forward Surge Current^*1
IFSM
50
A
Junction Temperature
Tj
125
ˆ
Storage Temperature Range
Tstg
-55ʙ+150 ˆ
*1É¿ Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
˙MARKING RULE
ᶃᶄᶅᶆᶇᶈ: 203V17 (Product Number)
ᶉᶊç ç ç ç : Assembly Lot Number
˙APPLICATIONS
˔Rectification
˔Protection against reverse connection of battery
˙PACKAGING INFORMATION
Cathode Bar
SMA
Unit: mm
˙PRODUCT NAME
PRODUCT NAME
XBS203V17˘^*
DEVICE ORIENTATION
R : Embossed tape, standard feed
* ˘ Please put the device orientation type “R”.
˙ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time^*2
ç *2ɿtrr measurement circuit
Bias
VF1
I_F=0.5A
VF2
I_F=1A
VF3
I_F=2A
IR
V_R=30V
Ct
V_R=1V , f=1MHz
trr
I_F=I_R=10mA , irr=1mA ,
Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.28
0.305
0.35
0.35
280
70
Ta=25ˆ
MAX.
0.365
0.375
0.39
3
-
-
UNIT
V
V
V
mA
pF
ns
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