XBS104V14_12 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 1A, 40V Type

XBS104V14R-G
Schottky Barrier Diode, 1A, 40V Type
ETR1610-002
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
Environmentally Friendly
■APPLICATIONS
: V_F=0.365V (TYP.)
: I_F(AV)=1A
: V_RM=40V
: EU RoHS Compliant, Pb Free
●Rectification
●Protection against reverse connection of battery
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
40
V
Reverse Voltage (DC)
VR
40
V
Forward Current (Average)
IF(AV)
1
A
Non Continuous
Forward Surge Current^*1
IFSM
20
A
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55～+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
■MARKING RULE
①: 0 (Product Number)
②: Assembly Lot Number
■PACKAGING INFORMATION
Cathode Bar
SOD-123A
Unit : mm
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104V14R-G
SOD-123A(Halogen & Antimony free)
XBS104V14R
SOD-123A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time^*2
*2：trr measurement circuit
VF1
I_F=100mA
VF2
I_F=500mA
VF3
I_F=1A
IR
V_R=40V
Ct
V_R=1V , f=1MHz
trr
I_F=I_R=10mA , irr=1mA
Bias
Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.23
0.30
0.365
0.25
150
41
Ta=25℃
MAX.
0.315
0.385
0.41
2
-
-
UNIT
V
V
V
mA
pF
ns
1/3