XBS024S15_15 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode

XBS024S15R-G
Schottky Barrier Diode, 200mA, 40V Type
ETR1605-003
■FEATURES
Forward Voltage
: V_F=0.53V (TYP.)
Forward Current
: I_F(AV)=200mA
Repetitive Peak Reverse Voltage : V_RM=40V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■APPLICATIONS
●Low Current Rectification
■ABSOLUTE MAXIMUM RATINGS ^{■PACKAGING INFORMATION}
PARMETER
SYMBOL RATINGS
Ta=25℃
UNIT
Repetitive Peak Voltage
VRM
40
V
Reverse Voltage (DC)
VR
40
V
Forward Current (Average)
IF(AV)
200
mA
Non Continuous
Forward Surge Current^*1
IFSM
1
A
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55～+150
℃
*1：Non continuous high amplitude 60Hz half-sine wave.
Cathode Bar
■MARKING RULE
①②
①: 1 (Product Number)
②: Assembly Lot Number
SOD-523
Unit : mm
■PRODUCT NAME
PRODUCT NAME
XBS024S15R
XBS024S15R-G
DEVICE ORIENTATION
SOD-523
SOD-523(Halogen & Antimony free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
VF1
I_F=10mA
VF2
I_F=200mA
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time^*
IR
V_R=40V
Ct
V_R=10V , f=1MHz
trr
I_F=I_R=10mA , irr=1mA
* : trr measurement circuit
Bias
Devise Under Test
Pulse Generatrix
I_F
Oscilloscope
0
A
irr
I_R
MIN.
-
-
-
-
-
LIMITS
TYP.
0.33
0.53
-
5
4
Ta=25℃
MAX.
-
0.6
2
-
-
UNIT
V
V
μA
pF
ns
trr
t
1/3