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XBS013V1DR-12 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode, 100mA, 30V Type | |||
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XBS013V1DR-G
Schottky Barrier Diode, 100mA, 30V Type
ËFEATURES
Ultra Small Package
Low VFç ç ç ç ç ç
ËAPPLICATIONS
ËLow Current Rectification
ETR1618-005
ËABSOLUTE MAXIMUM RATINGS ËPACKAGING INFORMATION
PARMETER
SYMBOL RATINGS
Repetitive Peak Voltage
VRM
30
Reverse Voltage (DC)
VR
30
Forward Current (Average)
IF(AV)
100
Peak Forward Surge Current *1
IFSM
0.5
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-40Ê+150
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
Ta=25Ë
UNITS
V
V
mA
A
Ë
Ë
0.30±0.05
0.20±0.03
ËMARKING RULE
TOP
BOTTOM
á¶É¿1 (Product Number)
a,b,c,d,eɿLot Number
Unit: mm
ËPRODUCT NAME
PRODUCT NAME
PACKAGE
XBS013V1DR-G *
USP-2B01
* The â-Gâ suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ËELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
VF1
Reverse Current
IR
IF=10mA
VR=10V
MIN.
-
-
LIMITS
TYP.
-
-
Ta=25Ë
MAX.
0.37
7
UNITS
V
ÐA
âNOTES ON çUSçE
1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. Compare to other packages, fixation strength
for the electrodes is weak due to its structure. Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
deformation and mechanical stress.
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