XBS013R1DR_15 Datasheet, PDF (1/3 Pages) Torex Semiconductor – Schottky Barrier Diode

XBS013R1DR-G
Schottky Barrier Diode, 100mA, 30V Type
˙FEATURES
Ultra Small Package
ç ç _{Low IRç ç ç ç ç ç}
˙APPLICATIONS
˔Low Current Rectification
ETR1617-005
˙ABSOLUTE MAXIMUM RATINGS ^{˙PACKAGING INFORMATION}
PARMETER
SYMBOL RATINGS
Repetitive Peak Voltage
VRM
30
Reverse Voltage (DC)
VR
30
Forward Current (Average)
IF(AV)
100
Peak Forward Surge Current ^*1
IFSM
0.5
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-40ʙ+150
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
Ta=25ˆ
UNITS
V
V
mA
A
ˆ
ˆ
0.30±0.05
0.20±0.03
˙MARKING RULE
TOP
BOTTOM
ᶃɿ2 (Product Number)
a,b,c,d,eɿLot Number
Unit: mm
˙PRODUCT NAME
PRODUCT NAME
XBS013R1DR-G ^*
PACKAGE
USP-2B01
* _{The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.}
* _{The device orientation is fixed in its embossed tape pocket.}
˙ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
VF1
Reverse Current
IR
I_F=10mA
V_R=10V
MIN.
-
-
LIMITS
TYP.
-
-
Ta=25ˆ
MAX.
0.46
0.3
UNITS
V
ЖA
●NOTES ON çUSçE
1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. Compare to other packages, fixation strength
for the electrodes is weak due to its structure. Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
deformation and mechanical stress.
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