XB0ASB03A1BR_001 Datasheet, PDF (1/4 Pages) Torex Semiconductor – Schottky Barrier Diode 500mA 30V Type

XB0ASB03A1BR
Schottky Barrier Diode 500mA 30V Type
ETR1602_001
■GENERAL DESCRIPTION
●Small package, SOD-323
Suitable for compact, low profile circuit designs
●Low Forward Voltage (VF=400mV@IF=500mA)
●Short reverse recovery time (trr=10ns)
■APPLICATIONS
●Rectification of compact DC/DC converter
●Surge absorption caused by counter force of
compact motors
●Protection against reverse connection of
battery
■FEATURES
500mA, 30V Type
Low VF 400mV @ 500mA (TYP.)
Small Package : SOD-323
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive Peak Reverse Voltage
VRM
Reverse Voltage (DC)
VR
Forward Current (Average)
IF(AV)
Non Continuous Forward Surge Current*1
IFSM
Junction Temperature
Tj
Storage Temperature Range
Tstg
*1: Non continuous high amplitude 60Hz half-sine wave.
RATINGS
30
20
0.5
5
125
-55~+150
Ta = 25℃
UNIT
V
V
A
A
℃
℃
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
LIMITS
TYP.
Forward Voltage (DC)
VF1
VF2
Reverse Current (DC)
IR
Inter-Terminal Capacity
Ct
Reverse Recovery Time *2
trr
IF=100mA
IF=500mA
VR=20V
VR=10V, f=1MHz
IF=IR=10mA, irr=1mA
－
－
－
0.4
－
－
－
12
－
10
Note) 1. This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2 : trr measurement circuit
MAX.
0.36
0.46
100
－
－
Ta=25℃
UNITS
V
V
μA
pF
ns
Bias
IF
trr
t
0
irr
A
IR
Pulse Generatrix
Oscilloscope
1/4