0785_XP161A1355PR Datasheet, PDF (1/4 Pages) Torex Semiconductor – POWER MOSFET

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NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.05Ω (max)
NUltra High-Speed Switching
NSOT-89 Package
NGate Protect Diode Built-in
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
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Low on-state resistance : Rds (on) = 0.05Ω ( Vgs = 4.5V )
: Rds (on) = 0.07Ω ( Vgs = 2.5V )
: Rds (on) = 0.15Ω ( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage : 1.5V
High density mounting : SOT-89
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PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
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PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
RATINGS
20
ʶ8
4
16
4
2
Ta=25^OC
UNITS
V
V
A
A
A
W
Tch
150
O_C
Tstg
- 55 ~ 150
O_C
( note ) : When implemented on a ceramic PCB
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