0770_XP152A01D8MR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

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NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.48Ω (max)
NUltra High-Speed Switching
NSOT-23 Package
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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The XP152A01D8MR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
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Low on-state resistance : Rds(on)=0.48Ω(Vgs=-4.5V)
: Rds(on)=0.80Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOT-23
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PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
-20
V
±12
V
-0.5
A
-1.5
A
-0.5
A
Continuous Channel
Power Dissipation (note)
Pd
0.5
W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a ceramic PCB
150
:
-55~150 :