T2316162A Datasheet, PDF (8/13 Pages) Taiwan Memory Technology – 1024K x 16 DYNAMIC RAM EDO PAGE MODE

tm TE
CH
V IH
R A S _{V IL}
CAS
V IH
V IL
V IH
A D D R _{V IL}
V IH
W E _{V IL}
V IO H
I/O _{V IO L}
V IH
O E _{V IL}
T2316162A
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
t_{R W C}
t_{R A S}
t_{R P}
t_{C R P}
t_{A SR}
t_{A R}
t_{R A D}
t_{R A H}
ROW
t_{R C D}
t_{C SH}
t_{R SH}
t_{C A S}
t_{C R P}
t_{A S C}
t_{R A L}
t_{C A H}
COLUM N
t_{R C S}
t_{R W D}
t_{C W D}
t_{A W D}
t_{A A}
t_{R A C}
t_{C A C}
t_{C L Z}
t_{C W L}
t_{R W L}
t_{W P}
t_{D S}
t_{D H}
V A IL D D _{O U T}
V A IL D D _IN
t_{O A C}
t_{O FF2}
t_{O E H}
ROW
V IH
RAS
V IL
V IH
C A S _{V IL}
V IH
A D D R _{V IL}
V IH
W E _{V IL}
V IO H
I /O _{V IO L}
OE
V IH
V IL
EDO-PAGE-MODE READ CYCLE
t_{R A S C}
t_{C R P}
t_{R C D}
t_{C S H}
t_{C A S}
t_{C P}
t_{P C}
t_{C A S}
t_{C P}
t_{R S H}
t_{C A S}
t_{R P}
t_{C R P}
t_{C P N}
t_{A S R}
t_{A R}
t_{R A D}
t_{R A H}
t_{A S C}
t_{C A H}
ROW
CO LUM N
t_{R C S}
O PEN
t_{A A}
t_{R A C}
t_{C A C}
t_{C L Z}
t_{O A C}
t_{O E S}
t_{A S C}
t_{C A H}
CO LUM N
t_{A S C}
t_{R A L}
t_{C A H}
CO LUM N
t_{R C H}
ROW
t_{R R H}
t_{C O H}
V A IL D
DATA
t_{A A}
t_{A C P}
t_{C A C}
V A IL D
DATA
t_{O F F 2}
t_{C L Z}
t_{O E H C}
t_{A A}
t_{A C P}
t_{C A C}
t_{O A C}
t_{O E S}
V A IL D
DATA
t_{O F F 2}
NO TE1
t_{O F F 1}
O PEN
t_{O E P}
D O N 'T C A R E
U N D E F IN E D
Note: 1. t_OFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
2. t_PC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of
CAS to rising edge of RAS . Both measurements must meet the t_PC specification.
TM Technology Inc. reserves the right
P. 8
to change products or specifications without notice.
Publication Date: APR. 2002
Revision:E