T15V4M08A Datasheet, PDF (6/11 Pages) Taiwan Memory Technology – 512K X 8 LOW POWER CMOS STATIC RAM

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Preliminary T15V4M08A
AC CHARACTERISTICS(Vcc=2.7 to 3.6V, Vss = 0V, Ta = -40°C to 85°C)
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low -Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
SYM.
t_RC
tAA
t_ACE
t_{O E}
t_OH
tL Z
t_{H Z}
t_OLZ
tOHZ
-5 5
Min Max
55 -
- 55
- 55
- 30
10 -
10 -
- 20
5
-
- 20
-7 0
Min Max
70 -
- 70
- 70
- 35
10 -
10 -
- 25
5
-
- 25
-100
Min Max
100 -
- 100
- 100
- 50
10 -
10 -
- 30
5
-
- 30
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Enable to Write End
Address Valid to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
SYM.
t_WC
tCW
t_AW
t_AS
tWP
t_WR
t_DW
tDH
t_WHZ
t_OW
-55
Min Max
55 -
50 -
50 -
0
-
45 -
0
-
25 -
0
-
- 20
5
-
-7 0
Min Max
70 -
60 -
60 -
0
-
50 -
0
-
30 -
0
-
- 25
5
-
-100
Min Max
100 -
80 -
80 -
0
-
70 -
0
-
40 -
0
-
- 30
5
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Taiwan Memory Technology, Inc. reserves the right P. 6
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0 .A