1N4001S_16 Datasheet, PDF (3/4 Pages) Taiwan Memory Technology – 1A, 50V - 1000V Silicon Rectifiers

CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
1N4001S - 1N4007S
Taiwan Semiconductor
10
f=1.0MHz
Vsig=50mVp-p
1
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
A-405
DIM.
A
B
C
D
E
Unit (mm)
Min Max
2.00 2.70
0.53 0.64
25.40 -
4.20 5.20
25.40 -
Unit (inch)
Min Max
0.079 0.106
0.021 0.025
1.000 -
0.165 0.205
1.000 -
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1402005
Version: F15