TESDUB5V0 Datasheet, PDF (1/3 Pages) Taiwan Memory Technology – Small Signal Product

Small Signal Product
Features
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Protects four Bi-directional I/O lines
- Low clamping voltage
- Working Voltage : 5, 12 and 24V
- High component density
Mechanical Data
Case : 0603-B standard package molded plastic
Terminals : Gold plated, solderable per MIL-STD-750, method 2026
Weight : 0.003g (approximately)
TESDUB5V0/12V/24V
Bi-directional ESD Protection Diodes
0603-B
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Diode breakdown voltage
Leakage current
Junction capacitance
ESD capability
Clamping voltage
Peak pulse power
Junction temperature range
Storage temperature range
TESDUB5V0
TESDUB12V
TESDUB24V
TESDUB5V0
TESDUB12V
TESDUB24V
TESDUB5V0
TESDUB12V
TESDUB24V
TESDUB5V0
TESDUB12V
TESDUB24V
TESDUB5V0
TESDUB12V
TESDUB24V
Conditions
IR=1mA
VR=5V
VR=12V
VR=24V
VR=0V,
f=1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
I_PP=5A, T_P=8/20us
I_PP=1A, T_P=8/20us
I_PP=1A, T_P=8/20us
T_P=8/20us
Symbol
V_BO
I_L
C_T
ESD
Vc
P_PP
T_J
T_STG
Min Typ Max Units
5.1
7
-
13
17
-
V
25
28
-
-
0.1
2
μA
15
20
-
12
-
pF
10
-
15
KV
8
15
-
-
25
V
47
75
-
-
25
W
47
-55 to + 125
°C
-55 to + 150
°C
Document number:DS_S1310001
Version:A13