T431616C Datasheet, PDF (1/30 Pages) Taiwan Memory Technology – 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

tm TE
CH
SDRAM
FEATURES
• 3.3V power supply
• Clock cycle time : 6 / 7 ns
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going
edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
• Available package type :
- 50 pin TSOP(II)/lead-free
• Operating temperature :
- 0 ~ +70 °C
T431616C
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T431616C is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clock cycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
ORDERING INFORMATION
PART NO.
T431616C-6S
T431616C-6SG
T431616C-7S
T431616C-7SG
CLOCK
CYCLE TIME
6ns
MAX
FREQUENCY
166 MHz
6ns
166 MHz
7ns
143 MHz
7ns
143 MHz
PACKAGE
TSOP-II
TSOP-II
Lead-free
TSOP-II
TSOP-II
Lead-free
OPERATING
TEMPERATURE
0 ~ +70 °C
0 ~ +70 °C
0 ~ +70 °C
0 ~ +70 °C
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A