T431616B Datasheet, PDF (1/31 Pages) Taiwan Memory Technology – 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

tm TE
CH
SDRAM
T431616B
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
FEATURES
• +2.7 to +3.6V power supply
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going edge
of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
- CAS Latency ( 1 & 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
• Available package type in 50 pin TSOP(II)
and 60-pin CSP
ORDERING INFORMATION
MAX
PART NO. FREQUENCY PACKAGE
T431616B-20S
T431616B-20C
T431616B-10S
T431616B-10C
50 MHz
50 MHz
100 MHz
100 MHz
TSOP-II
CSP
TSOP-II
CSP
GRNERAL DESCRIPTION
The T431616B is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clockcycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
Taiwan Memory Technology, Inc. reserves the right P. 1
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A