|
T15V2M16B Datasheet, PDF (1/12 Pages) Taiwan Memory Technology – 128K X 16 LOW POWER CMOS STATIC RAM | |||
|
tm TE
CH
SRAM
T15V2M16B
128K X 16 LOW POWER
CMOS STATIC RAM
FEATURES
⢠Access time : 45/55/70/100 ns
⢠Low-power consumption
- Active: 5mA (ICC1)
- Stand-by: (CMOS input/output)
Max.. 15 uA for 55/70/100ns
Max.. 40 uA for 45ns
⢠Equal access and cycle time
⢠Single +2.7V to 3.6V Power Supply
⢠TTL compatible , Tri-state output
⢠Common I/O capability
⢠Automatic power-down when deselected
⢠Available in 44-PIN TSOP-II and 48-pin CSP
packages
⢠Operating temperature :
- -10 ~ +70 °C
- -40 ~ +85 °C
GENERAL DESCRIPTION
The T15V2M16B is a very Low Power CMOS
Static RAM organized as 131,072 words by 16
bits . This device is fabricated by high
performance CMOS technology. It can be operated
under wide power supply voltage range from
+2.7V to +3.6V.
The T15V2M16B inputs and three-state
outputs are TTL compatible and allow for direct
interfacing with common system bus structures.
Data retention is guaranteed at a power supply
voltage as low as 2V.
BLOCK DIAGRAM
PART NUMBER EXAMPLES
PART NUMBER
T15V2M16B-55S
T15V2M16B-70C
T15V2M16B-55SI
T15V2M16B-70CI
PACKAGE
TSOP-II
CSP
TSOP-II
CSP
Temperature
-10 ~ +70 °C
-10 ~ +70 °C
-40 ~ +85 °C
-40 ~ +85 °C
Vcc
Vss
A0 DECODER
.
.
.
A16
CE
WE
OE
LB
CONTROL
CIRCUIT
UB
CORE
ARRAY
I/O1
DATA I/O
.
.
.
I/O16
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: NOV. 2002
Revision:A
|
▷ |