T14L1024N Datasheet, PDF (1/13 Pages) Taiwan Memory Technology – 128K X 8 HIGH SPEED CMOS STATIC RAM

tm TE
CH
SRAM
T14L1024N
128K X 8 HIGH SPEED
CMOS STATIC RAM
FEATURES
• Fast Address Access Times : 10/12/15ns
• Single 3.3V ±0.3V power supply
• Center power/ground pin configuration
• Low Power Consumption : 110/105/100mA
• TTL I/O compatible
• 2.0V data retention mode
• Automatic power-down when deselected
• Available packages :
- 32-pin 300 mil and 400 mil SOJ
- 32-pin TSOP 8x13.4mm and 8x20mm
- 36-Ball CSP (8x10mm)
PART NUMBER EXAMPLES
PACKAGE
SPEED
T14L1024N-10J SOJ 300mil
10ns
T14L1024N-10W SOJ 400 mil
10ns
T14L1024N-10P TSOP 8x13.4mm 10ns
T14L1024N-10H TSOP 8x20mm 10ns
T14L1024N-10C 36-Ball CSP
10ns
GENERAL DESCRIPTION
The T14L1024N is a one-megabit density, fast
static random access memory organized as
131,072 words by 8 bits. It is designed for
use in high performance memory applications
such as main memory storage and high speed
communication buffers. Fabricated using high
performance CMOS technology, access times
down to 10ns are achieved.
BLOCK DIAGRAM
Vcc
Vss
A0
...
DECODER
.
A16
CORE
ARRAY
CE
I/O0
.
DATA I/O _..
WE
OE
I/O7
PIN DESCRIPTION
SYMBOL
A0 - A16
I/O0 - I/O7
CE
WE
OE
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable
Output Enable
Power Supply
Ground
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: APR. 2002
Revision: C