S5A_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 5A, 50V - 1000V Surface Mount Rectifiers

S5A - S5M
Taiwan Semiconductor
CREAT BY ART
5A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.21 g (approximately)
DO-214AB (SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL S5A S5B S5D S5G S5J S5K S5M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
I_F= 5 A
V_F
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
I_R
Typical reverse recovery time (Note 2)
t_rr
Typical junction capacitance (Note 3)
C_J
Typical thermal resistance
R_θJL
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
5
A
100
A
1.15
10
250
1.5
60
13
47
- 55 to +150
- 55 to +150
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1410020
Version: C15