S3AB_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 3A, 50V - 1000V Surface Mount Rectifiers

S3AB - S3MB
Taiwan Semiconductor
CREAT BY ART
3A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
S3 S3 S3 S3 S3 S3
SYMBOL
AB BB DB GB JB KB
Maximum repetitive peak reverse voltage
V_RRM
50 100 200 400 600 800
Maximum RMS voltage
V_RMS
35 70 140 280 420 560
Maximum DC blocking voltage
V_DC
50 100 200 400 600 800
Maximum average forward rectified current
I_F(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
80
Maximum instantaneous forward voltage (Note 1)
@3A
V_F
Maximum reverse current @ rated V_R
Typical reverse recovery time (Note 2)
T_J=25°C
T_J=125°C
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
t_rr
C_J
R_θJL
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.15
10
250
1.5
40
10
- 55 to +150
- 55 to +150
S3
MB
1000
700
1000
Unit
V
V
V
A
A
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1410018
Version: J15