S2A_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 2A, 50V - 1400V Surface Mount Rectifiers

CREAT BY ART
2A, 50V - 1400V Surface Mount Rectifiers
S2A - S2V
Taiwan Semiconductor
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL S2A S2B S2D S2G S2J S2K S2M S2Q S2V UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
@2A
V_F
Maximum reverse current @ rated V_R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
T_J=25°C
T_J=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
t_rr
C_J
R_θJL
R_θJA
T_J
T_STG
Note 2: Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and applied reverse coltage of 4.0V DC.
50 100 200 400 600 800 1000 1200 1400 V
35 70 140 280 420 560 700 840 980 V
50 100 200 400 600 800 1000 1200 1400 V
2
A
50
A
1.15
1
125
1.5
30
16
53
- 55 to +150
- 55 to +150
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1410014
Version: K15