S1JF Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 1A, 600V - 1000V Surface Mount Rectifiers

S1JF - S1MF
Taiwan Semiconductor
CREAT BY ART
1A, 600V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Low leakage current
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: SMAF
Molding compound: UL flammability classification rating 94V-0
MSL1: per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 35mg (approximately)
SMAF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
S1JF
S1KF
S1MF
Maximum repetitive peak reverse voltage
V_RRM
600
800
1000
Maximum RMS voltage
V_RMS
420
560
700
Maximum DC blocking voltage
V_DC
600
800
1000
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V_R
Typical reverse recovery time (Note 2)
T_J=25°C
T_J=125°C
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
V_F
I_R
t_rr
C_J
R_θJL
R_θJA
T_J
T_STG
1.1
5
50
1.8
6
25
70
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1511004
Version: A15