S1AL_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 1A, 50V - 1000V Surface Mount Rectifier

CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifier
S1AL - S1ML
Taiwan Semiconductor
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low-Profile Package
- Low power loss, high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: Sub SMA
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL S1AL S1BL S1DL S1GL S1JL S1KL S1ML UNIT
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated V_R
Typical junction capacitance (Note 2)
Typical reverse recovery time (Note 3)
T_J=25°C
T_J=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
C_J
t_rr
R_θJL
R_θJA
T_J
T_STG
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
1AL 1BL 1DL 1GL 1JL 1KL 1ML
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1
A
30
A
1.1
5
50
9
1.8
25
85
- 55 to +175
- 55 to +175
V
μA
pF
μs
30
85
°C/W
°C
°C
Document Number: DS_D1410010
Version: O15