GP1001_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 10A, 50V - 1000V Glass Passivated Rectifiers

GP1001 - GP1007
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.82 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
GP GP GP GP GP GP
SYMBOL
1001 1002 1003 1004 1005 1006
Maximum repetitive peak reverse voltage
V_RRM
50 100 200 400 600 800
Maximum RMS voltage
V_RMS
35
70 140 280 420 560
Maximum DC blocking voltage
V_DC
50 100 200 400 600 800
Maximum average forward rectified current
I_F(AV)
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
125
GP
1007
1000
700
1000
Maximum instantaneous forward voltage (Note 1)
@5A
V_F
1.1
Maximum reverse current @ rated V_R ^TJ=25°C
I_R
T_J=125°C
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C_J
R_θJC
T_J
T_STG
Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
5
200
30
3
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
Version: F1511