FR101G_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 1A, 50V - 1000V Glass Passivated Fast Recovery Rectifiers

FR101G - FR107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated Fast Recovery Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight: 0.34 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
FR
FR
FR
FR
FR
SYMBOL
101G 102G 103G 104G 105G
Maximum repetitive peak reverse voltage
V_RRM
50
100 200 400 600
Maximum RMS voltage
V_RMS
35
70
140 280 420
Maximum DC blocking voltage
V_DC
50
100 200 400 600
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
1.3
Maximum reverse current @ rated VR T_J=25 °C
T_J=125 °C
I_R
Maximum reverse recovery time (Note 2)
trr
Typical junction capacitance (Note 3)
C_J
Typical thermal resistance
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
100
150
250
10
70
- 55 to +150
- 55 to +150
FR
106G
800
560
800
FR
107G
1000
700
1000
500
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1410034
Version: G15