F1T1_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – Fast Recovery Rectifiers

CREAT BY ART
Fast Recovery Rectifiers
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
F1T1 thru F1T7
Taiwan Semiconductor
MECHANICAL DATA
Case: TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL F1T1 F1T2 F1T3 F1T4 F1T5 F1T6 F1T7 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1
A
30
A
1.2
V
5
μA
150
150
250
500
ns
10
pF
100
- 55 to +150
- 55 to +150
O_C/W
O_C
O_C
Document Number: DS_D1402003
Version: F14