ES1A_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 1A, 50V - 600V Surface Mount Super Fast Rectifiers

ES1A - ES1J
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Built-in strain relief
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
ES ES ES ES ES ES ES ES
SYMBOL
1A 1B 1C 1D 1F 1G 1H 1J
Maximum repetitive peak reverse voltage
V_RRM
50 100 150 200 300 400 500 600
Maximum RMS voltage
V_RMS
35 70 105 140 210 280 350 420
Maximum DC blocking voltage
V_DC
50 100 150 200 300 400 500 600
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
I_R
Maximum reverse recovery time (Note 2)
t_rr
Typical junction capacitance (Note 3)
C_J
Typical thermal resistance
R_θJL
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied V_R=4.0 Volts
0.95
1.3
1.7
5
100
35
16
18
35
85
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1411076
Version: M15