1T1G_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 1A, 50V - 1000V Glass Passivated Rectifiers

1T1G - 1T7G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- Low forward voltage drop
- High current capability
- High reliability
- High surge current capability
- 3mm miniature body
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TS-1
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight: 0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL 1T1G 1T2G 1T3G 1T4G 1T5G 1T6G 1T7G UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR T_J=25 °C
T_J=125 °C
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1.0 MHz and Applied V_R=4.0 Volts
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
I_R
C_J
R_θJA
T_J
T_STG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1
A
30
A
1.1
1.0
5
100
10
100
- 55 to +150
- 55 to +150
V
μA
pF
°C/W
°C
°C
Document Number: DS_D1410024
Version: G15